APTGT100TDU60PG Microchip Technology
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Technische Details APTGT100TDU60PG Microchip Technology
Description: IGBT MODULE 600V 150A 340W SP6P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 340 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V.
Weitere Produktangebote APTGT100TDU60PG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGT100TDU60PG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 200A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Case: SP6P Gate-emitter voltage: ±20V Collector current: 100A Topology: IGBT x6 Anzahl je Verpackung: 6 Stücke |
Produkt ist nicht verfügbar |
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APTGT100TDU60PG | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 150A 340W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT100TDU60PG | Hersteller : Microchip Technology | IGBT Modules DOR CC6512 |
Produkt ist nicht verfügbar |
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APTGT100TDU60PG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 200A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Case: SP6P Gate-emitter voltage: ±20V Collector current: 100A Topology: IGBT x6 |
Produkt ist nicht verfügbar |