APTGT150DU120G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 6 Stücke
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Technische Details APTGT150DU120G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1200V 220A 690W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 690 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V.
Weitere Produktangebote APTGT150DU120G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGT150DU120G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 220A 690W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT150DU120G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
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| APTGT150DU120G | Hersteller : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP6C |
Produkt ist nicht verfügbar |
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| APTGT150DU120G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.2kV Collector current: 150A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 350A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |