Technische Details APTGT200A120D3G MICROSEMI
Description: IGBT MODULE 1200V 300A 1040W D3, Packaging: Bulk, Package / Case: D-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: D3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1040 W, Current - Collector Cutoff (Max): 6 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Weitere Produktangebote APTGT200A120D3G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APTGT200A120D3G | Microchip Technology |
Description: IGBT MODULE 1200V 300A 1040W D3Packaging: Bulk Package / Case: D-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A NTC Thermistor: No Supplier Device Package: D3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1040 W Current - Collector Cutoff (Max): 6 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| APTGT200A120D3G | Microchip Technology |
IGBT Modules PM-IGBT-TFS-D3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTGT200A120D3G |
![]() |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 300A 1040W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1040 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE 1200V 300A 1040W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1040 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT200A120D3G |
![]() |
Hersteller: Microchip Technology
IGBT Modules PM-IGBT-TFS-D3
IGBT Modules PM-IGBT-TFS-D3
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH

