APTGT200A120D3G MICROSEMI

Description: IGBT MODULE 1200V 300A 1040W D3, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V, Current - Collector Cutoff (Max): 6 mA, Power - Max: 1040 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 300 A, IGBT Type: Trench Field Stop, Supplier Device Package: D3, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: D-3 Module, Packaging: Bulk.