APTGT200DH120G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Case: SP6C
Anzahl je Verpackung: 5 Stücke
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Technische Details APTGT200DH120G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: Field Stop; Trench, Topology: asymmetrical bridge, Case: SP6C, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote APTGT200DH120G
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT200DH120G | Hersteller : Microchip Technology |
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| APTGT200DH120G | Hersteller : Microchip Technology |
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| APTGT200DH120G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge Case: SP6C |
Produkt ist nicht verfügbar |