APTGT300DH60G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Pulsed collector current: 500A
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Type of semiconductor module: IGBT
Case: SP6C
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Anzahl je Verpackung: 5 Stücke
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Technische Details APTGT300DH60G MICROCHIP TECHNOLOGY
Description: IGBT MODULE 600V 430A 1150W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 430 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 1150 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 24 nF @ 25 V.
Weitere Produktangebote APTGT300DH60G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| APTGT300DH60G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 430A 1150W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 430 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1150 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 24 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT300DH60G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
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| APTGT300DH60G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Pulsed collector current: 500A Technology: Field Stop; Trench Topology: asymmetrical bridge Type of semiconductor module: IGBT Case: SP6C Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 300A |
Produkt ist nicht verfügbar |