APTGT50TL601G Microchip Technology

Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 93.51 EUR |
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Technische Details APTGT50TL601G Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Weitere Produktangebote APTGT50TL601G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGT50TL601G | Hersteller : Microchip Technology |
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APTGT50TL601G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 50A; SP1; screw Collector current: 50A Case: SP1 Gate-emitter voltage: ±20V Pulsed collector current: 100A Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Application: photovoltaics Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Anzahl je Verpackung: 16 Stücke |
Produkt ist nicht verfügbar |
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APTGT50TL601G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTGT50TL601G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 50A; SP1; screw Collector current: 50A Case: SP1 Gate-emitter voltage: ±20V Pulsed collector current: 100A Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Application: photovoltaics Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |