APTGT50TL60T3G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 50A; SP3; screw
Collector current: 50A
Case: SP3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: photovoltaics
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Anzahl je Verpackung: 15 Stücke
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Technische Details APTGT50TL60T3G MICROCHIP TECHNOLOGY
Description: IGBT MODULE 600V 80A 176W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Weitere Produktangebote APTGT50TL60T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTGT50TL60T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT50TL60T3G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
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| APTGT50TL60T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 50A; SP3; screw Collector current: 50A Case: SP3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Application: photovoltaics Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |