Technische Details APTGT75DH120T3G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: asymmetrical bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 75A, Case: SP3F, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 175A, Technology: Field Stop; Trench, Mechanical mounting: screw.
Weitere Produktangebote APTGT75DH120T3G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APTGT75DH120T3G | Microchip Technology |
 IGBT Modules PM-IGBT-TFS-SP3F |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| APTGT75DH120T3G | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: SP3F Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 175A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTGT75DH120T3G |
|
Hersteller: Microchip Technology
IGBT Modules PM-IGBT-TFS-SP3F
IGBT Modules PM-IGBT-TFS-SP3F
Produkt ist nicht verfügbar
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT75DH120T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: SP3F
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: SP3F
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen
Stück im Wert von UAH