APTGT75DH120T3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: SP3F
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 13 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: SP3F
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 13 Stücke
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Technische Details APTGT75DH120T3G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: asymmetrical bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 75A, Case: SP3F, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 175A, Technology: Field Stop; Trench, Mechanical mounting: screw, Anzahl je Verpackung: 13 Stücke.
Weitere Produktangebote APTGT75DH120T3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT75DH120T3G | Hersteller : Microchip Technology | Description: IGBT MODULE 1200V 110A 357W SP3 |
Produkt ist nicht verfügbar |
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APTGT75DH120T3G | Hersteller : Microchip Technology | IGBT Modules PM-IGBT-TFS-SP3F |
Produkt ist nicht verfügbar |
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APTGT75DH120T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: SP3F Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 175A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |