APTGV15H120T3G Microsemi Corporation

Description: IGBT MODULE 1200V 25A 115W SP3, Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 115 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 25 A, IGBT Type: NPT, Trench Field Stop, Supplier Device Package: SP3, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP3, Packaging: Bulk.