APTGX100A120T1G Microchip Technology

Description: IGBT MODULE 1200V 155A 416W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A, NTC Thermistor: Yes, Current - Collector (Ic) (Max): 155 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 416 W, Current - Collector Cutoff (Max): 15 µA, Input Capacitance (Cies) @ Vce: 20000 pF @ 25 V.