APTM100U13SG Microsemi Corporation
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 65A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 31600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: J3 Module
Packaging: Bulk
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Technische Details APTM100U13SG Microsemi Corporation
Description: MOSFET N-CH 1000V 65A MODULE, Input Capacitance (Ciss) (Max) @ Vds: 31600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4V @ 10mA, Power Dissipation (Max): 1250W (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 32.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: J3 Module, Packaging: Bulk.