APTM120UM95FAG Microsemi Corporation
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 103A SP6
Input Capacitance (Ciss) (Max) @ Vds: 30900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1122 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 15mA
Power Dissipation (Max): 2272W (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 51.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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Technische Details APTM120UM95FAG Microsemi Corporation
Description: MOSFET N-CH 1200V 103A SP6, Input Capacitance (Ciss) (Max) @ Vds: 30900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1122 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 5V @ 15mA, Power Dissipation (Max): 2272W (Tc), Rds On (Max) @ Id, Vgs: 114mOhm @ 51.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.