APTM50AM24SCG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 500V; 110A; SP6C; Idm: 600A; 1.25kW, Case: SP6C, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes, Pulsed drain current: 600A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 500V, Drain current: 110A, On-state resistance: 28mΩ, Semiconductor structure: SiC diode/transistor, Power dissipation: 1.25kW, Anzahl je Verpackung: 1 Stücke.