
APTM50AM24SCG Microchip Technology
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Technische Details APTM50AM24SCG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 500V; 110A; SP6C; Idm: 600A; 1.25kW, Case: SP6C, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes, Pulsed drain current: 600A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 500V, Drain current: 110A, On-state resistance: 28mΩ, Semiconductor structure: SiC diode/transistor, Power dissipation: 1.25kW, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM50AM24SCG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM50AM24SCG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; SiC diode/transistor; 500V; 110A; SP6C; Idm: 600A; 1.25kW Case: SP6C Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 600A Type of semiconductor module: MOSFET transistor Drain-source voltage: 500V Drain current: 110A On-state resistance: 28mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 1.25kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM50AM24SCG | Hersteller : Microsemi Power Products Group |
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Produkt ist nicht verfügbar |
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APTM50AM24SCG | Hersteller : Microsemi |
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Produkt ist nicht verfügbar |
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APTM50AM24SCG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; SiC diode/transistor; 500V; 110A; SP6C; Idm: 600A; 1.25kW Case: SP6C Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 600A Type of semiconductor module: MOSFET transistor Drain-source voltage: 500V Drain current: 110A On-state resistance: 28mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 1.25kW |
Produkt ist nicht verfügbar |