APTM50AM38SCTG Microchip Technology
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Technische Details APTM50AM38SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 500V; 67A; SP4; Idm: 360A; 694W; screw, Case: SP4, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor, Pulsed drain current: 360A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 500V, Drain current: 67A, On-state resistance: 45mΩ, Semiconductor structure: SiC diode/transistor, Power dissipation: 694W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM50AM38SCTG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTM50AM38SCTG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 500V; 67A; SP4; Idm: 360A; 694W; screw Case: SP4 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 360A Type of semiconductor module: MOSFET transistor Drain-source voltage: 500V Drain current: 67A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 694W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM50AM38SCTG | Hersteller : Microsemi Power Products Group |
Description: MOSFET 2N-CH 500V 90A SP4 |
Produkt ist nicht verfügbar |
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| APTM50AM38SCTG | Hersteller : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
Produkt ist nicht verfügbar |
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| APTM50AM38SCTG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 500V; 67A; SP4; Idm: 360A; 694W; screw Case: SP4 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 360A Type of semiconductor module: MOSFET transistor Drain-source voltage: 500V Drain current: 67A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 694W |
Produkt ist nicht verfügbar |