APTM50DAM19G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 122A; SP6C; Idm: 652A; 1136W; screw
Case: SP6C
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: POWER MOS 7®
On-state resistance: 22.5mΩ
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Topology: boost chopper
Gate-source voltage: ±30V
Drain current: 122A
Drain-source voltage: 500V
Power dissipation: 1136W
Pulsed drain current: 652A
Anzahl je Verpackung: 1 Stücke
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Technische Details APTM50DAM19G MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 500V; 122A; SP6C; Idm: 652A; 1136W; screw, Case: SP6C, Mechanical mounting: screw, Type of semiconductor module: MOSFET transistor, Technology: POWER MOS 7®, On-state resistance: 22.5mΩ, Electrical mounting: FASTON connectors; screw, Semiconductor structure: diode/transistor, Topology: boost chopper, Gate-source voltage: ±30V, Drain current: 122A, Drain-source voltage: 500V, Power dissipation: 1136W, Pulsed drain current: 652A, Anzahl je Verpackung: 1 Stücke.
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Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 122A; SP6C; Idm: 652A; 1136W; screw Case: SP6C Mechanical mounting: screw Type of semiconductor module: MOSFET transistor Technology: POWER MOS 7® On-state resistance: 22.5mΩ Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Topology: boost chopper Gate-source voltage: ±30V Drain current: 122A Drain-source voltage: 500V Power dissipation: 1136W Pulsed drain current: 652A |
Produkt ist nicht verfügbar |