APTM50H10FT3G MICROCHIP TECHNOLOGY

Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 28A; SP3; Press-in PCB; 312W
On-state resistance: 0.12Ω
Drain current: 28A
Power dissipation: 312W
Drain-source voltage: 500V
Pulsed drain current: 140A
Topology: H-bridge; NTC thermistor
Case: SP3
Semiconductor structure: transistor/transistor
Technology: FREDFET; POWER MOS 7®
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
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Technische Details APTM50H10FT3G MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 500V; 28A; SP3; Press-in PCB; 312W, On-state resistance: 0.12Ω, Drain current: 28A, Power dissipation: 312W, Drain-source voltage: 500V, Pulsed drain current: 140A, Topology: H-bridge; NTC thermistor, Case: SP3, Semiconductor structure: transistor/transistor, Technology: FREDFET; POWER MOS 7®, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Gate-source voltage: ±30V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM50H10FT3G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM50H10FT3G | Hersteller : Microsemi Power Products Group |
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APTM50H10FT3G | Hersteller : Microsemi |
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APTM50H10FT3G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 500V; 28A; SP3; Press-in PCB; 312W On-state resistance: 0.12Ω Drain current: 28A Power dissipation: 312W Drain-source voltage: 500V Pulsed drain current: 140A Topology: H-bridge; NTC thermistor Case: SP3 Semiconductor structure: transistor/transistor Technology: FREDFET; POWER MOS 7® Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |