APTM50HM75SCTG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw, Case: SP4, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor, Pulsed drain current: 184A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 500V, Drain current: 34A, On-state resistance: 90mΩ, Semiconductor structure: SiC diode/transistor, Power dissipation: 357W, Anzahl je Verpackung: 1 Stücke.