APTM50SKM35TG Microsemi Corporation
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 99A SP4
Power Dissipation (Max): 781W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 5mA
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Technische Details APTM50SKM35TG Microsemi Corporation
Description: MOSFET N-CH 500V 99A SP4, Power Dissipation (Max): 781W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 99A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP4, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SP4, Vgs(th) (Max) @ Id: 5V @ 5mA.