APTMC120AM08CD3AG Microsemi Power Products Group

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 190A; D3; Idm: 550A; 1.1kW; SiC, Power dissipation: 1.1kW, Case: D3, Semiconductor structure: SiC diode/transistor, Topology: MOSFET half-bridge, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, On-state resistance: 10mΩ, Drain current: 190A, Pulsed drain current: 550A, Drain-source voltage: 1.2kV, Electrical mounting: FASTON connectors; screw, Technology: SiC, Anzahl je Verpackung: 1 Stücke.