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APTMC120HRM40CT3AG MICROCHIP TECHNOLOGY


125299-aptmc120hrm40ct3ag-rev0-datasheet Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Power dissipation: 375W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 34mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 140A
Anzahl je Verpackung: 1 Stücke
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Technische Details APTMC120HRM40CT3AG MICROCHIP TECHNOLOGY

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F, Power dissipation: 375W, Case: SP3F, Semiconductor structure: common emitter; SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 55A, On-state resistance: 34mΩ, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: Field Stop; SiC; Trench, Topology: IGBT x2; MOSFET half-bridge; NTC thermistor, Pulsed drain current: 140A, Anzahl je Verpackung: 1 Stücke.

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APTMC120HRM40CT3AG Hersteller : Microchip Technology 125299-aptmc120hrm40ct3ag-rev0-datasheet Description: SIC 2N-CH 1200V 73A SP3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 375W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 12.5mA
Supplier Device Package: SP3
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APTMC120HRM40CT3AG Hersteller : Microsemi 125299-aptmc120hrm40ct3ag-rev0-datasheet Discrete Semiconductor Modules Power Module - SiC
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APTMC120HRM40CT3AG Hersteller : MICROCHIP TECHNOLOGY 125299-aptmc120hrm40ct3ag-rev0-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Power dissipation: 375W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 34mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 140A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH