APTMC120TAM17CTPAG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB, Power dissipation: 625W, Case: SP6P, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 110A, On-state resistance: 17mΩ, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: SiC, Topology: MOSFET x3 half-bridge; NTC thermistor, Pulsed drain current: 300A, Type of semiconductor module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.