Produkte > ALLIANCE MEMORY, INC. > AS4C16M16MSB-6BINTR
AS4C16M16MSB-6BINTR

AS4C16M16MSB-6BINTR Alliance Memory, Inc.


AllianceMemory_AS4C16M16MSB-6BIN_256Mb_LPSDR_1.8V_rev1.0_230307_CV.PDF Hersteller: Alliance Memory, Inc.
Description: IC DRAM 256MBIT LVCMOS 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: LVCMOS
Access Time: 5.5 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AS4C16M16MSB-6BINTR Alliance Memory, Inc.

Description: IC DRAM 256MBIT LVCMOS 54FBGA, Packaging: Tape & Reel (TR), Package / Case: 54-TFBGA, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPSDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 54-FBGA (8x8), Write Cycle Time - Word, Page: 15ns, Memory Interface: LVCMOS, Access Time: 5.5 ns, Memory Organization: 16M x 16.

Weitere Produktangebote AS4C16M16MSB-6BINTR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AS4C16M16MSB-6BINTR AS4C16M16MSB-6BINTR Hersteller : Alliance Memory AllianceMemory_AS4C16M16MSB_6BIN_256Mb_LPSDR_1_8V_-3478146.pdf DRAM LPSDRAM, 256M, 16M X 16, 1.8V, 54 BALL, BGA, 16 X 16MM, 166MHZ INDUSTRIAL TEMP, T&R, B Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH