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AS4C16M32MD1-5BINTR ALLIANCE MEMORY


Alliance_Selection_Guide _Print2024.pdf Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Anzahl je Verpackung: 1000 Stücke
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Technische Details AS4C16M32MD1-5BINTR ALLIANCE MEMORY

Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 512Mb DRAM, Memory organisation: 16Mx32bit, Clock frequency: 200MHz, Access time: 15ns, Case: FBGA90, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel, Operating voltage: 1.8V, Anzahl je Verpackung: 1000 Stücke.

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AS4C16M32MD1-5BINTR AS4C16M32MD1-5BINTR Hersteller : Alliance Memory, Inc. 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Description: IC DRAM 512MBIT PARALLEL 90FBGA
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AS4C16M32MD1-5BINTR Hersteller : Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
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AS4C16M32MD1-5BINTR Hersteller : ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Produkt ist nicht verfügbar