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AS4C16M32MSA-6BINTR ALLIANCE MEMORY


20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
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Technische Details AS4C16M32MSA-6BINTR ALLIANCE MEMORY

Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C, Type of integrated circuit: DRAM memory, Case: FBGA90, Mounting: SMD, Operating temperature: -40...85°C, Operating voltage: 1.8V, Kind of package: in-tray, Clock frequency: 166MHz, Kind of memory: SDRAM, Kind of interface: parallel, Memory capacity: 512Mb, Memory organisation: 16Mx32bit, Access time: 5.5ns.

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AS4C16M32MSA-6BINTR AS4C16M32MSA-6BINTR Hersteller : Alliance Memory, Inc. 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Description: IC DRAM 512MBIT PARALLEL 90FBGA
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AS4C16M32MSA-6BINTR AS4C16M32MSA-6BINTR Hersteller : Alliance Memory 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
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AS4C16M32MSA-6BINTR Hersteller : ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar