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AS4C32M16D1-5BCN

AS4C32M16D1-5BCN Alliance Memory, Inc.


512M-AS4C32M16D1-TFBGA.pdf Hersteller: Alliance Memory, Inc.
Description: IC DRAM 512MBIT PAR 60TFBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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Technische Details AS4C32M16D1-5BCN Alliance Memory, Inc.

Description: IC DRAM 512MBIT PAR 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x13), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 32M x 16, DigiKey Programmable: Not Verified.

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AS4C32M16D1-5BCN AS4C32M16D1-5BCN Hersteller : Alliance Memory AS4C32M16D1_5BCN_AllianceMemory_512M_AS4C32M16D1_TFBGA_Rev1.1_February2018.pdf DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Commercial Temp - Tray
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AS4C32M16D1-5BCN Hersteller : ALLIANCE MEMORY Alliance_Selection_Guide _Print2025.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Operating voltage: 2.5V
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 32Mx16bit
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray
Kind of interface: parallel
Produkt ist nicht verfügbar
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