Technische Details AS4C32M16SB-6TINTR Alliance Memory, Inc.
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 512Mb DRAM, Memory organisation: 8Mx16bitx4, Operating voltage: 3.3V, Clock frequency: 166MHz, Access time: 5ns, Case: TSOP54 II, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel.
Weitere Produktangebote AS4C32M16SB-6TINTR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AS4C32M16SB-6TINTR | Alliance Memory |
 DRAM 512M 3.3V 133MHz 32M x 16 SDRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AS4C32M16SB-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Operating voltage: 3.3V Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AS4C32M16SB-6TINTR |
|
Hersteller: Alliance Memory
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AS4C32M16SB-6TINTR |
|
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Operating voltage: 3.3V
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Operating voltage: 3.3V
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH