AS4C32M8SA-6TIN Alliance Memory
Hersteller: Alliance Memory
DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray
Produktrezensionen
Produktbewertung abgeben
Technische Details AS4C32M8SA-6TIN Alliance Memory
Description: IC DRAM 256MBIT PAR 54TSOP II, Memory Organization: 32M x 8, Access Time: 5.5 ns, Memory Interface: Parallel, Part Status: Active, Supplier Device Package: 54-TSOP II, Memory Format: DRAM, DigiKey Programmable: Not Verified, Clock Frequency: 166 MHz, Technology: SDRAM, Voltage - Supply: 3V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 256Mbit, Mounting Type: Surface Mount, Package / Case: 54-TSOP (0.400", 10.16mm Width), Packaging: Tray.
Weitere Produktangebote AS4C32M8SA-6TIN
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
AS4C32M8SA-6TIN | Hersteller : Alliance Memory, Inc. |
Description: IC DRAM 256MBIT PAR 54TSOP IIMemory Organization: 32M x 8 Access Time: 5.5 ns Memory Interface: Parallel Part Status: Active Supplier Device Package: 54-TSOP II Memory Format: DRAM DigiKey Programmable: Not Verified Clock Frequency: 166 MHz Technology: SDRAM Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Packaging: Tray |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AS4C32M8SA-6TIN | Hersteller : Alliance Memory |
Синхронна динамічна енергозалежна пам'ять SDRAM, Uживл, В = 3,0...3.6, Інтерфейс = Паралельний, Об. пам. = 256 Мбіт, Орг. пам. = 32М х 8, Тдост/Частота = 166 МГц, Тексп, °С = -40...+85, tдост = 5,5 нс,... Група товару: Інтегральні мікросхеми Корпус: TSOPAnzahl je Verpackung: 108 Stücke |
Produkt ist nicht verfügbar |
