auf Bestellung 210 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 9.52 EUR |
| 10+ | 8.66 EUR |
| 25+ | 8.4 EUR |
| 108+ | 8.22 EUR |
| 216+ | 7.51 EUR |
| 540+ | 7.31 EUR |
| 1080+ | 7.05 EUR |
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Technische Details AS4C4M16SA-6TAN Alliance Memory
Description: IC DRAM 64MBIT PAR 54TSOP II, Packaging: Tray, Package / Case: 54-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 54-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 2ns, Memory Interface: Parallel, Access Time: 5.4 ns, Memory Organization: 4M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote AS4C4M16SA-6TAN nach Preis ab 7.69 EUR bis 10.11 EUR
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AS4C4M16SA-6TAN | Hersteller : Alliance Memory, Inc. |
 Description: IC DRAM 64MBIT PAR 54TSOP IIPackaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Part Status: Active Write Cycle Time - Word, Page: 2ns Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 662 Stücke: Lieferzeit 21-28 Tag (e) |
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AS4C4M16SA-6TAN | Hersteller : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M16SA-6TAN | Hersteller : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |