AS4C512M8D3LC-12BAN ALLIANCE MEMORY

Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 4Gb DRAM
Kind of memory: DDR3L; SDRAM
Operating temperature: -40...105°C
Mounting: SMD
Case: FBGA78
Operating voltage: 1.35V
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of package: in-tray
Anzahl je Verpackung: 220 Stücke
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Technische Details AS4C512M8D3LC-12BAN ALLIANCE MEMORY
Description: IC DRAM 4GBIT PARALLEL 78FBGA, Packaging: Tray, Package / Case: 78-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.283V ~ 1.45V, Technology: SDRAM - DDR3L, Clock Frequency: 800 MHz, Memory Format: DRAM, Supplier Device Package: 78-FBGA (7.5x10.6), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 512M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote AS4C512M8D3LC-12BAN
Foto | Bezeichnung | Hersteller | Beschreibung |
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AS4C512M8D3LC-12BAN | Hersteller : Alliance Memory, Inc. |
![]() Packaging: Tray Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-FBGA (7.5x10.6) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AS4C512M8D3LC-12BAN | Hersteller : Alliance Memory |
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Produkt ist nicht verfügbar |
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AS4C512M8D3LC-12BAN | Hersteller : ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Memory: 4Gb DRAM Kind of memory: DDR3L; SDRAM Operating temperature: -40...105°C Mounting: SMD Case: FBGA78 Operating voltage: 1.35V Type of integrated circuit: DRAM memory Memory organisation: 512Mx8bit Access time: 13.75ns Clock frequency: 800MHz Kind of package: in-tray |
Produkt ist nicht verfügbar |