AS4C64M16MD1A-5BIN Alliance Memory
auf Bestellung 624 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 22.33 EUR |
10+ | 20.59 EUR |
25+ | 20.15 EUR |
50+ | 20.1 EUR |
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Technische Details AS4C64M16MD1A-5BIN Alliance Memory
Description: IC DRAM 1GBIT PARALLEL 60FBGA, Packaging: Tray, Package / Case: 60-VFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 60-FBGA (8x9), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5 ns, Memory Organization: 64M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote AS4C64M16MD1A-5BIN
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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AS4C64M16MD1A-5BIN | Hersteller : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 200MHz Access time: 6.5ns Case: FBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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AS4C64M16MD1A-5BIN | Hersteller : Alliance Memory, Inc. |
Description: IC DRAM 1GBIT PARALLEL 60FBGA Packaging: Tray Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (8x9) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AS4C64M16MD1A-5BIN | Hersteller : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 200MHz Access time: 6.5ns Case: FBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
Produkt ist nicht verfügbar |