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AS4C64M8D1-5TCNTR ALLIANCE MEMORY


512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
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Technische Details AS4C64M8D1-5TCNTR ALLIANCE MEMORY

Description: IC DRAM 512MBIT PAR 66TSOP II, Packaging: Tape & Reel (TR), Package / Case: 66-TSSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 66-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 64M x 8.

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AS4C64M8D1-5TCNTR AS4C64M8D1-5TCNTR Hersteller : Alliance Memory, Inc. 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf Description: IC DRAM 512MBIT PAR 66TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 64M x 8
Produkt ist nicht verfügbar
AS4C64M8D1-5TCNTR Hersteller : Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
Produkt ist nicht verfügbar
AS4C64M8D1-5TCNTR Hersteller : ALLIANCE MEMORY 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Produkt ist nicht verfügbar