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AS4C8M16D1-5BIN

AS4C8M16D1-5BIN Alliance Memory, Inc.


Hersteller: Alliance Memory, Inc.
Description: IC DRAM 128MBIT PAR 60TFBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.72 EUR
10+4.4 EUR
25+4.27 EUR
50+4.17 EUR
Mindestbestellmenge: 4
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Technische Details AS4C8M16D1-5BIN Alliance Memory, Inc.

Description: IC DRAM 128MBIT PAR 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x13), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 8M x 16, DigiKey Programmable: Not Verified.

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AS4C8M16D1-5BIN AS4C8M16D1-5BIN Hersteller : Alliance Memory AS4C8M16D1_5BIN_128Mb_AS4C8M16D1_5BCIN_BGA_v.1.0_May_2015_2.pdf DRAM DDR1, 128Mb, 8M x 16, 2.5V, 60ball TFBGA, 200Mhz, Industrial Temp - Tray
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AS4C8M16D1-5BIN Hersteller : ALLIANCE MEMORY Alliance_Selection_Guide _Print2025.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; in-tray
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5V
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bit
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Case: FBGA60
Kind of package: in-tray
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH