AS4C8M16MSB-6BIN Alliance Memory, Inc.
Hersteller: Alliance Memory, Inc.
Description: IC DRAM 128MBIT LVCMOS 54FBGA
Memory Organization: 8M x 16
Access Time: 5.5 ns
Memory Interface: LVCMOS
Write Cycle Time - Word, Page: 15ns
Part Status: Active
Supplier Device Package: 54-FBGA (8x8)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM - Mobile SDRAM
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Packaging: Tray
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.54 EUR |
| 10+ | 11.66 EUR |
| 25+ | 11.3 EUR |
| 50+ | 11.03 EUR |
| 100+ | 10.77 EUR |
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Technische Details AS4C8M16MSB-6BIN Alliance Memory, Inc.
Description: IC DRAM 128MBIT LVCMOS 54FBGA, Memory Organization: 8M x 16, Access Time: 5.5 ns, Memory Interface: LVCMOS, Write Cycle Time - Word, Page: 15ns, Part Status: Active, Supplier Device Package: 54-FBGA (8x8), Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM - Mobile SDRAM, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 128Mbit, Mounting Type: Surface Mount, Package / Case: 54-TFBGA, Packaging: Tray.
Weitere Produktangebote AS4C8M16MSB-6BIN
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AS4C8M16MSB-6BIN | Alliance Memory |
 DRAM LPSDRAM, 128M 8M X 16, 1.8V, 54 BALL, BGA, 8X16MM, 166MHZ INDUSTRIAL TEMP, B Die |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 319 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AS4C8M16MSB-6BIN |
|
Hersteller: Alliance Memory
DRAM LPSDRAM, 128M 8M X 16, 1.8V, 54 BALL, BGA, 8X16MM, 166MHZ INDUSTRIAL TEMP, B Die
DRAM LPSDRAM, 128M 8M X 16, 1.8V, 54 BALL, BGA, 8X16MM, 166MHZ INDUSTRIAL TEMP, B Die
Produkt ist nicht verfügbar
Mindestbestellmenge: 319 Stücke
Im Einkaufswagen
Stück im Wert von UAH