Technische Details AS6C1616-55BINTR Alliance Memory, Inc.
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48, Type of integrated circuit: SRAM memory, Kind of memory: asynchronous; SRAM, Memory: 16Mb SRAM, Memory organisation: 1Mx16bit, Case: TFBGA48, Mounting: SMD, Integrated circuit features: LPC, Access time: 55ns, Operating voltage: 2.7...3.6V.
Weitere Produktangebote AS6C1616-55BINTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| AS6C1616-55BINTR | Hersteller : Alliance Memory |
 SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM |
Produkt ist nicht verfügbar |
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| AS6C1616-55BINTR | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Access time: 55ns Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |