AS6C2008-55TINTR Alliance Memory, Inc.
Hersteller: Alliance Memory, Inc.
Description: IC SRAM 2MBIT PARALLEL 32TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 256K x 8
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 32-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
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Technische Details AS6C2008-55TINTR Alliance Memory, Inc.
Description: IC SRAM 2MBIT PARALLEL 32TSOP I, DigiKey Programmable: Not Verified, Memory Organization: 256K x 8, Access Time: 55 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 55ns, Part Status: Active, Supplier Device Package: 32-TSOP I, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 2Mbit, Mounting Type: Surface Mount, Package / Case: 32-TFSOP (0.724", 18.40mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote AS6C2008-55TINTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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AS6C2008-55TINTR | Hersteller : Alliance Memory |
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
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AS6C2008-55TINTR | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TSOP32; parallel Mounting: SMD Case: TSOP32 Integrated circuit features: LPC Kind of interface: parallel Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3.3V Memory organisation: 256kx8bit Memory: 2Mb SRAM Kind of memory: asynchronous; SRAM |
Produkt ist nicht verfügbar |