AS6C2008A-55BIN Alliance Memory, Inc.
Hersteller: Alliance Memory, Inc.
Description: IC SRAM 2MBIT PARALLEL 36TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 8
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 36-TFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Packaging: Tray
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Technische Details AS6C2008A-55BIN Alliance Memory, Inc.
Description: IC SRAM 2MBIT PARALLEL 36TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 256K x 8, Access Time: 55 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 55ns, Part Status: Active, Supplier Device Package: 36-TFBGA (6x8), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.7V ~ 5.5V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 2Mbit, Mounting Type: Surface Mount, Package / Case: 36-TFBGA, Packaging: Tray.
Weitere Produktangebote AS6C2008A-55BIN
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| AS6C2008A-55BIN | Hersteller : Alliance Memory |
SRAM 2M 2.7-3.6V 55ns 256Kx8 LP Async SRAM |
Produkt ist nicht verfügbar |
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| AS6C2008A-55BIN | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36 Kind of memory: asynchronous; SRAM Mounting: SMD Integrated circuit features: LPC Type of integrated circuit: SRAM memory Case: TFBGA36 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 2.7...5.5V Memory: 2Mb SRAM Memory organisation: 256kx8bit |
Produkt ist nicht verfügbar |