AS6C8008-55BINTR Alliance Memory, Inc.
Hersteller: Alliance Memory, Inc.
Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-TFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
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Technische Details AS6C8008-55BINTR Alliance Memory, Inc.
Description: IC SRAM 8MBIT PARALLEL 48TFBGA, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 48-LFBGA, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Memory Organization: 1M x 8, Access Time: 55 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 55ns, Supplier Device Package: 48-TFBGA (6x8), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.7V ~ 5.5V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile.
Weitere Produktangebote AS6C8008-55BINTR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AS6C8008-55BINTR | Alliance Memory |
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AS6C8008-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Operating voltage: 2.7...5.8V Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating temperature: -40...85°C Kind of interface: parallel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AS6C8008-55BINTR |
|
Hersteller: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AS6C8008-55BINTR |
|
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 2.7...5.8V
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating temperature: -40...85°C
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 2.7...5.8V
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating temperature: -40...85°C
Kind of interface: parallel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH