AS6C8016-55BIN Alliance Memory, Inc.
Hersteller: Alliance Memory, Inc.Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 682 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 13.24 EUR |
| 230+ | 12.93 EUR |
| 480+ | 12.29 EUR |
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Technische Details AS6C8016-55BIN Alliance Memory, Inc.
Description: IC SRAM 8MBIT PARALLEL 48TFBGA, Packaging: Tray, Package / Case: 48-LFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote AS6C8016-55BIN nach Preis ab 13.52 EUR bis 18.82 EUR
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AS6C8016-55BIN | Hersteller : Alliance Memory |
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM |
auf Bestellung 151 Stücke: Lieferzeit 14-28 Tag (e) |
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| AS6C8016-55BIN | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
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| AS6C8016-55BIN | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V |
Produkt ist nicht verfügbar |