AS7C34098B-10TINTR ALLIANCE MEMORY
Hersteller: ALLIANCE MEMORYCategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.7÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: TSOP44 II
Memory organisation: 256kx16bit
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Access time: 10ns
Integrated circuit features: fast
Memory capacity: 4Mb
Anzahl je Verpackung: 1000 Stücke
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Technische Details AS7C34098B-10TINTR ALLIANCE MEMORY
Description: IC SRAM 4MBIT PARALLEL 44TSOP2, Packaging: Tape & Reel (TR), Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP2, Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote AS7C34098B-10TINTR
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AS7C34098B-10TINTR | Hersteller : Alliance Memory, Inc. |
Description: IC SRAM 4MBIT PARALLEL 44TSOP2 Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP2 Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| AS7C34098B-10TINTR | Hersteller : Alliance Memory |
SRAM 4M 2.7V 10ns FAST 256Kx16 Asynch SRAM |
Produkt ist nicht verfügbar |
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| AS7C34098B-10TINTR | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kx16bit; 2.7÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Mounting: SMD Case: TSOP44 II Memory organisation: 256kx16bit Operating voltage: 2.7...3.6V Kind of memory: asynchronous; SRAM Access time: 10ns Integrated circuit features: fast Memory capacity: 4Mb |
Produkt ist nicht verfügbar |