ATP103-TL-H onsemi

Description: MOSFET P-CH 30V 55A ATPAK, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: ATPAK, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: ATPAK (2 leads+tab), Packaging: Tape & Reel (TR).