AU1FMHM3/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details AU1FMHM3/H Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Avalanche, Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AU1FMHM3/H nach Preis ab 0.13 EUR bis 0.55 EUR
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AU1FMHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 1A DO219AB Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 24939 Stücke: Lieferzeit 10-14 Tag (e) |
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AU1FMHM3/H | Vishay General Semiconductor |
Rectifiers 1A 1000V AVALANCHE ULTRAFAST |
auf Bestellung 30370 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AU1FMHM3/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 24939 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 53+ | 0.34 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| AU1FMHM3/H |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1A 1000V AVALANCHE ULTRAFAST
Rectifiers 1A 1000V AVALANCHE ULTRAFAST
auf Bestellung 30370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.55 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |