AU2PKHM3_A/H Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 1.64 EUR |
| 10+ | 1.34 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.72 EUR |
| 1500+ | 0.68 EUR |
| 3000+ | 0.64 EUR |
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Technische Details AU2PKHM3_A/H Vishay General Semiconductor
Description: DIODE AVALANCHE 800V 1.3A TO277A, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 1.3A, Capacitance @ Vr, F: 29pF @ 4V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 800 V, Grade: Automotive.
Weitere Produktangebote AU2PKHM3_A/H
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AU2PKHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.3A TO277AOperating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.3A Capacitance @ Vr, F: 29pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AU2PKHM3_A/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.3A TO277A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Description: DIODE AVALANCHE 800V 1.3A TO277A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH



