AU2PM-M3/86A Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 3+ | 1.11 EUR |
| 10+ | 0.97 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.61 EUR |
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Technische Details AU2PM-M3/86A Vishay General Semiconductor
Description: DIODE AVALANCHE 1KV 1.3A TO277A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 1.3A, Capacitance @ Vr, F: 29pF @ 4V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote AU2PM-M3/86A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
AU2PM-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.3A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.3A Capacitance @ Vr, F: 29pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
AU2PM-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.3A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.3A Capacitance @ Vr, F: 29pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AU2PM-M3/86A |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AU2PM-M3/86A |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



