
AUIRF1010EZS Infineon Technologies

Trans MOSFET N-CH Si 60V 84A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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266+ | 2.09 EUR |
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Technische Details AUIRF1010EZS Infineon Technologies
Description: AUIRF1010 - 55V-60V N-CHANNEL AU, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF1010EZS nach Preis ab 2.48 EUR bis 4.68 EUR
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AUIRF1010EZS | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 402 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1010EZS | Hersteller : International Rectifier |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRF1010EZS | Hersteller : Infineon Technologies |
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