AUIRF1010ZSTRL Infineon Technologies
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.11 EUR |
| 10+ | 5.12 EUR |
| 25+ | 4.84 EUR |
| 100+ | 4.15 EUR |
| 250+ | 3.91 EUR |
| 500+ | 3.68 EUR |
| 800+ | 2.97 EUR |
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Technische Details AUIRF1010ZSTRL Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3, Part Status: Not For New Designs, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF1010ZSTRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AUIRF1010ZSTRL | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 94A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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AUIRF1010ZSTRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 94A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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AUIRF1010ZSTRL | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK Type of transistor: N-MOSFET Case: D2PAK Drain-source voltage: 55V Drain current: 94A Power dissipation: 140W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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AUIRF1010ZSTRL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF1010ZSTRL | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK Type of transistor: N-MOSFET Case: D2PAK Drain-source voltage: 55V Drain current: 94A Power dissipation: 140W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |