AUIRF1324S-7P ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - AUIRF1324S-7P - AUIRF1324 - 20V-40V N-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 12681 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details AUIRF1324S-7P ROCHESTER ELECTRONICS
Description: MOSFET N-CH 24V 240A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK (7-Lead), Part Status: Obsolete, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF1324S-7P
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AUIRF1324S-7P | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 24V 429A Automotive 7-Pin(6+Tab) D2PAK Tube |
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AUIRF1324S-7P | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 429A Power dissipation: 300W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AUIRF1324S-7P | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 24V 240A D2PAK Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Obsolete Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF1324S-7P | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 429A Power dissipation: 300W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |