AUIRF2804L Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH Si 40V 270A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 6864 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 52+ | 10.74 EUR |
| 100+ | 9.93 EUR |
| 500+ | 9.16 EUR |
| 1000+ | 8.32 EUR |
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Technische Details AUIRF2804L Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF2804L nach Preis ab 9.93 EUR bis 10.74 EUR
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AUIRF2804L | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF2804L | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - AUIRF2804L - AUIRF2804 - 20V-40V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 6985 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF2804L Produktcode: 100972
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AUIRF2804L | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A Automotive 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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AUIRF2804L | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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AUIRF2804L | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 300W Case: TO262 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 160nC Kind of channel: enhancement Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AUIRF2804L | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 195A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF2804L | Hersteller : Infineon Technologies |
MOSFETs AUTO 40V 1 N-CH HEXFET 2.3mOhms |
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AUIRF2804L | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 300W Case: TO262 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 160nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |