AUIRF3710ZSTRL Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH Si 100V 59A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 7200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 3.18 EUR |
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Technische Details AUIRF3710ZSTRL Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF3710ZSTRL nach Preis ab 2.90 EUR bis 7.48 EUR
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AUIRF3710ZSTRL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 59A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 453 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF3710ZSTRL | Hersteller : Infineon Technologies |
MOSFETs AUTO 100V 1 N-CH HEXFET 18mOhms |
auf Bestellung 379 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF3710ZSTRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R |
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AUIRF3710ZSTRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 59A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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AUIRF3710ZSTRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 59A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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AUIRF3710ZSTRL | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 59A Power dissipation: 160W Case: D2PAK Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel Anzahl je Verpackung: 800 Stücke |
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AUIRF3710ZSTRL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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AUIRF3710ZSTRL | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 59A Power dissipation: 160W Case: D2PAK Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
Produkt ist nicht verfügbar |