AUIRF3710ZSTRL Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 100V 59A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Technische Details AUIRF3710ZSTRL Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF3710ZSTRL nach Preis ab 2.93 EUR bis 7.48 EUR
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AUIRF3710ZSTRL | Infineon Technologies |
Trans MOSFET N-CH Si 100V 59A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 14400 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF3710ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 100V 59A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 483 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF3710ZSTRL |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 100V 59A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH Si 100V 59A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 14400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 3.53 EUR |
| 8000+ | 3.2 EUR |
| 12000+ | 2.93 EUR |
| AUIRF3710ZSTRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.48 EUR |
| 10+ | 4.94 EUR |
| 100+ | 3.51 EUR |