AUIRF7648M2TR Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
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Technische Details AUIRF7648M2TR Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET, Vgs(th) (Max) @ Id: 4.9V @ 150µA, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric M4, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: DirectFET™ Isometric M4, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote AUIRF7648M2TR nach Preis ab 2.75 EUR bis 7.5 EUR
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AUIRF7648M2TR | Infineon Technologies |
MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 7mOhms |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7648M2TR | Infineon Technologies |
Description: MOSFET N-CH 60V 14A DIRECTFET Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: DirectFET™ Isometric M4 Vgs(th) (Max) @ Id: 4.9V @ 150µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric M4 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 9399 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AUIRF7648M2TR |
|
Hersteller: Infineon Technologies
MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 7mOhms
MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 7mOhms
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.65 EUR |
| 10+ | 4.51 EUR |
| 100+ | 3.26 EUR |
| 500+ | 2.76 EUR |
| AUIRF7648M2TR |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.5 EUR |
| 10+ | 4.96 EUR |
| 100+ | 3.51 EUR |
| 500+ | 2.9 EUR |
| 1000+ | 2.75 EUR |