AUIRF9952QTR Infineon Technologies


AUIRF9952Q.pdf
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
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Technische Details AUIRF9952QTR Infineon Technologies

Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.

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AUIRF9952QTR AUIRF9952QTR Infineon / IR auirf9952q-1225284.pdf MOSFET AUTO 30V 1 N-CH HEXFET 100mOhms
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AUIRF9952QTR auirf9952q-1225284.pdf
Hersteller: Infineon / IR
MOSFET AUTO 30V 1 N-CH HEXFET 100mOhms
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